elektronische bauelemente SSP7431P -17a, -30v, r ds(on) 13 m ? p-channel enhancement mosfet 01-may-2011 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe sop-8pp saves board space. ? fast switching speed. ? high performance trench technology. application dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. package information package mpq leader size sop-8pp 3k 7? inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v t a =25c -17 continuous drain current 1 t a =70c i d -14 a pulsed drain current 2 i dm -50 a continuous source current (diode conduction) 1 i s -2.1 a t a =25c 5.0 power dissipation 1 t a =70c p d 3.2 w operating junction and st orage temperature range t j , t stg -55~150 c thermal resistance rating t Q 10 sec 25 maximum junction to ambient 1 steady-state r ja 65 c / w notes: 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. millimete r millimete r ref. min. max. ref. min. max. a 1.00 1.10 0 12 b 5.70 5.80 b 0.33 0.51 c 0.20 0.30 d 1.27bsc d 3.61 3.98 e 1.35 1.75 e 5.40 6.10 g 1.10 - f 0.08 0.20 g 3.60 3.99 sop-8pp b e f g g a e b d c d s s s gd d d d
elektronische bauelemente SSP7431P -17a, -30v, r ds(on) 13 m ? p-channel enhancement mosfet 01-may-2011 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage v (br)dss -30 - - v v gs =0, i d = -250 a gate-threshold voltage v gs(th) -1 - - v v ds =v gs , i d = -250 a gate-body leakage i gss - - 100 na v ds =0, v gs = 25v - - -1 v ds = -24v, v gs =0 zero gate voltage drain current i dss - - -5 a v ds = -24v, v gs =0, t j =55c on-state drain current 1 i d(on) -50 - - a v ds = -5v, v gs = -10v - - 13 v gs = -10v, i d = -11.5a drain-source on-resistance 1 r ds(on) - - 19 m ? v gs = -4.5v, i d = -9.3a forward transconductance 1 g fs - 29 - s v ds = -15v, , i d = -11.5a diode forward voltage v sd - -0.8 - v i s =2.5a, v gs =0 dynamic 2 total gate charge q g - 25 - gate-source charge q gs - 11 - gate-drain charge q gd - 17 - nc i d = -11.5a v ds = -15v v gs = -5v turn-on delay time td (on) - 15 - rise time t r - 13 - turn-off delay time td (off) - 100 - fall time t f - 54 - ns i d = -1a, v dd = -15v v gen = -10v r l =6 ? notes: 1. pulse test pw Q 300 s duty cycle Q 2%. 2. guaranteed by design, not s ubject to production testing.
elektronische bauelemente SSP7431P -17a, -30v, r ds(on) 13 m ? p-channel enhancement mosfet 01-may-2011 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente SSP7431P -17a, -30v, r ds(on) 13 m ? p-channel enhancement mosfet 01-may-2011 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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